tid report iruh33 p 2 53b1m june 2003 1 iruh33p253b1m low dose test report june 2003 this report is for information purposes only and may not be applicable to the current design of the product internation a l re ctifier cu rrently does n o t have a dscc app roved radi ati on ha rdne ss assu ra nce program for mil-prf - 38 5 34.
tid report iruh33 p 2 53b1m june 2003 2 low dose (tid) testing the iruh33p253b1m (formally identified as the omr9601sck) was chosen as the test device fo r the series of regulators using the same com ponents. the module has been tested in accordance with mil-std-883, method 1019, c ondition c. the radiation hardness assurance group o f international rectifier conducted this test at t he univ ersity of massachuset ts research nuclear reactor in lowell, mass. this facility has been granted lab suitability by the defense supp ly center columbus (dscc). pr e and post radiation testing was perfo rmed at the reactor site in umass, lowell. all other test s including electrical performance, qci screening, burn-in and aging are conducted at internat ional rectifier in leominster, mass. the test plan for conducting the radiation testing is incl uded in appendix a, herein. radiation t e sting was comprised of the followin g conditions; biased, with 3.3vin and a low dose rate (.100 rad/sec(si)), ambient temp - 25 0 c schematic of the iruh33p2 53b1m (omr9601sck) regulator is shown in figure 1. figure 1 ? iruh33p253b1m schematic
tid report iruh33 p 2 53b1m june 2003 3 test results low dose rate bias conditions are shown in figure 2. bias was applied to all devices during irradiation. devices tested at pre-irradiation were wi thin specification lim its. all dev ices were teste d at each irradiation step in accordanc e to mil-std-883, method 1019, c ondition c. t he electrical te st results are provided in appendix b, herein. four devic es were irr adiated to 1. 5 m rad (si) at a dose rate of 0.1 rad (si)/sec. analysis of the data indicated a rise in output voltage up to approximately 170krads at w h ich time the output voltage began to shift toward its nom inal lev e l, refer to figure 3. t h is phenomena can be attributed to several factors within the regul ator. degradation of the drive ci rcuits (npn) output transistors and the reference source, along with t he output (pnp) pass transistor attribute to this effect. this data is shown graphic a lly in figur es 3 thru 7 below. one devic e serial #189 indicated an alarm for load regulation at 1.2 m r ad (si). subsequent testing of serial #189 di d not indicate any problem s, thus it was conclud ed that the test data was acquired incorrectly. iruh33 p 25 3b 1m figure 2 tid bias (low dose rate)
tid report iruh33 p 2 53b1m june 2003 4 table 1 below shows the mean value of key paramet ers for each test point at the low dos e rate. table 1 ? mean parameters per test point ( biased ) biased devices pre rad data post rad data test krads 1 33 79 169 246 355 443 481 557 1050 1214 1417 1476 v o u t 1 ( v ) 2 . 5 0 2 . 5 3 2 . 5 6 2 . 5 7 2 . 5 6 2 . 5 4 2 . 5 3 2 . 5 2 2 . 5 2 2 . 5 0 2 . 5 0 2 . 5 0 2 . 5 0 v o u t 2 ( v ) 2 . 4 9 2 . 5 2 2 . 5 4 2 . 5 6 2 . 5 4 2 . 5 3 2 . 5 2 2 . 5 1 2 . 5 1 2 . 4 9 2 . 4 9 2 . 4 9 2 . 4 9 v o u t 3 ( v ) 2 . 5 0 2 . 5 3 2 . 5 6 2 . 5 7 2 . 5 5 2 . 5 4 2 . 5 3 2 . 5 2 2 . 5 1 2 . 5 0 2 . 4 9 2 . 5 0 2 . 5 0 v o u t 4 ( v ) 2 . 4 8 2 . 5 2 2 . 5 4 2 . 5 6 2 . 5 4 2 . 5 2 2 . 5 1 2 . 5 1 2 . 5 0 2 . 4 9 2 . 4 8 2 . 4 8 2 . 4 8 line r e g ( m v ) - 1 . 4 2 - 0 . 2 1 0 . 3 8 - 0 . 3 8 - 0 . 4 5 - 0 . 7 1 0 . 2 6 0 . 3 7 - 0 . 1 3 1 . 8 6 3 . 4 8 3 . 7 6 4 . 7 8 load r e g ( m v ) 9 . 5 8 9 . 3 4 9 . 1 4 9 . 9 2 1 0 . 3 6 1 0 . 1 3 9 . 2 0 9 . 6 3 9 . 5 1 8 . 9 8 4 . 4 8 4 . 5 6 3 . 4 4 ibi a s ( m a ) - 1 . 4 3 - 1 . 4 2 1 . 8 5 1 . 1 7 4 . 3 7 1 . 3 4 1 . 3 4 1 . 5 1 - 1 . 3 5 - 2 . 3 8 5 . 4 8 - 0 . 1 8 - 0 . 1 9 short c k t ( a ) 4 . 2 9 4 . 2 0 4 . 1 0 3 . 3 0 3 . 1 7 3 . 0 8 3 . 2 7 3 . 0 3 3 . 5 3 3 . 1 8 3 . 7 6 4 . 0 4 3 . 8 6 e n a b l e ( v ) 2 . 5 0 2 . 5 3 2 . 5 6 2 . 5 7 2 . 5 6 2 . 5 4 2 . 5 3 2 . 5 2 2 . 5 1 2 . 5 0 2 . 5 0 2 . 5 0 2 . 5 0 d i s a b l e ( v ) 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 0 . 0 0 e n a b l e ( v ) 2 . 5 0 2 . 5 3 2 . 5 6 2 . 5 7 2 . 5 6 2 . 5 4 2 . 5 3 2 . 5 2 2 . 5 1 2 . 5 0 2 . 5 0 2 . 5 0 2 . 5 0 vo l t a g e o u t p u t 2. 40 2. 45 2. 50 2. 55 2. 60 1 1 0 100 1000 10000 krad s vout (v) v o ut 1 @ 0. 01a v o ut 4 @ 3a figure 3
tid report iruh33 p 2 53b1m june 2003 5 li ne re gu l a ti on -2. 0 0 -1. 0 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 1 1 0 100 1000 10000 kr a d s lin reg (mv) figure 4 load re gulation 0.0 0 2.0 0 4.0 0 6.0 0 8.0 0 10 . 0 0 12 . 0 0 1 1 0 100 1000 10000 kra d s loa d re g (mv) figure 5
tid report iruh33 p 2 53b1m june 2003 6 ibia s - 1 0. 00 -8 . 0 0 -6 . 0 0 -4 . 0 0 -2 . 0 0 0. 00 2. 00 4. 00 6. 00 8. 00 10 . 0 0 1 1 0 100 1000 10 000 kr a d s ibias (ma) figure 6 s h o r t c i rc u i t c u rre n t 0. 00 0. 50 1. 00 1. 50 2. 00 2. 50 3. 00 3. 50 4. 00 4. 50 5. 00 isc (a) 1 1 0 100 1000 10000 kr a d s figure 7
tid report iruh33p253b1m june 2003 7 summary the biased devices performed extr emely well to the total accumula ted rate of exposure of 1.5m rad (si). degradation of t he internal reference source is noticeable at 30k rad (si) (see figure 3). this anomaly continues up to 170krads at which ti me the gains of the driv e and output transistors begin to have an opposing effect to t he radiation. the result is a sh ift of the output voltage towards its nominal value. conclusion low dose irradiation indicates an enhanced low dose ra te sensitivity (eldrs) effect as shown in the graphs and data. response to the low dose radiation is very robust. in accordance to method 1019, condition c, the devices can be rated at > 500k rad (si) (2x) at low dose rate of 0.100 rad (si)/sec?.
tid report iruh33p253b1m june 2003 8 appendix a electrical test results
tid report iruh33 p 2 53b1m june 2003 9 table 4 ? electrical test results ? pre-irradiati o n biased devices pre-irradia t ion data test ser # 173 189 181 186 limits v o u t 1 ( v ) 2.50 2.50 2.51 2.50 [ 2.4 t o 2.6 v ] v o u t 2 ( v ) 2.49 2.49 2.50 2.49 [ 2.4 t o 2.6 v ] v o u t 3 ( v ) 2.50 2.50 2.51 2.50 [ 2.4 t o 2.6 v ] v o u t 4 ( v ) 2.48 2.48 2.49 2.48 [ 2.4 t o 2.6 v ] line reg (mv) -1.42 -1.32 -1.27 -1.65 [ -100 t o 10 0 m v ] load reg (mv) 11.30 9.30 9.81 7.92 [ -20 t o 20 mv ] i b i a s ( m a ) 2.62 -13.59 2.66 2.62 [ -10 t o 10 ma ] short ckt (a) 4.35 4.27 4.27 4.27 [ 3 to 9a ] e n a b l e ( v ) 2.50 2.50 2.51 2.50 [ 2.4 t o 2.6 v ] d i s a b l e ( v ) 0.00 0.00 0.00 0.00 [ -0.1 t o 0.1 v ] e n a b l e ( v ) 2.50 2.50 2.51 2.50 [ 2.4 t o 2.6 v ]
tid report iruh33p253b1m june 2003 10 table 5 ? electrical test results ? post-irradiation sn: 173 date: 5/30/02 6/4/02 6/11/02 6/25/02 7/5/02 7/22/02 8/2/02 8/8/02 8/20/02 11/13/02 12/10/02 1/13/03 1/23/03 tests krads: 1 33 79 169 246 355 443 481 557 1050 1214 1417 1476 limits vout1 (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.53 2.52 2.51 2.50 2.47 2.50 2.50 [ 2.4 to 2.6 v ] vout2 (v) 2.49 2.52 2.54 2.56 2.54 2.52 2.51 2.51 2.50 2.49 2.48 2.49 2.49 [ 2.4 to 2.6 v ] vout3 (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.53 2.52 2.51 2.50 2.47 2.50 2.50 [ 2.4 to 2.6 v ] vout4 (v) 2.48 2.51 2.53 2.55 2.53 2.51 2.51 2.50 2.49 2.48 2.61 2.47 2.47 [ 2.4 to 2.6 v ] line reg (mv) -1.42 -0.28 0.68 -0.35 -0.35 -0.69 -0.01 0.39 -0.29 2.01 4.60 3.60 4.55 [ -100 to 100 mv ] load reg (mv) 11.30 10.79 10.21 11.98 11.98 12.14 11.46 11.92 11.75 11.49 21.26 8.94 7.62 [ -20 to 20 mv ] ibias (ma) 2.62 2.70 5.27 4.62 4.62 4.36 4.15 4.68 2.68 1.79 1.00 2.44 1.75 [ -10 to 10 ma ] short ckt (a) 4.35 4.27 4.15 3.29 3.29 3.05 3.25 3.06 3.54 3.15 3.76 4.09 3.92 [ 3 to 9a ] enable (v) 2.50 2.53 2.55 2.57 2.57 2.53 2.53 2.52 2.51 2.50 2.49 2.50 2.50 [ 2.4 to 2.6 v ] disable (v) 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 [ -0.1 to 0.1 v ] enable (v) 2.50 2.53 2.55 2.57 2.57 2.53 2.53 2.52 2.51 2.50 2.50 2.50 2.50 [ 2.4 to 2.6 v ] sn: 189 date: 5/30/02 6/4/02 6/11/02 6/25/02 7/5/02 7/22/02 8/2/02 8/8/02 8/20/02 11/13/02 12/10/02 1/13/03 1/23/03 tests krads: 1 33 79 169 246 355 443 481 557 1050 1214 1417 1476 limits vout1 (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.48 2.49 2.49 [ 2.4 to 2.6 v ] vout2 (v) 2.49 2.52 2.54 2.56 2.54 2.52 2.51 2.51 2.50 2.49 2.48 2.48 2.49 [ 2.4 to 2.6 v ] vout3 (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.48 2.49 2.49 [ 2.4 to 2.6 v ] vout4 (v) 2.48 2.51 2.53 2.55 2.54 2.52 2.51 2.51 2.49 2.48 2.47 2.48 2.48 [ 2.4 to 2.6 v ] line reg (mv) -1.32 -0.06 0.55 -0.33 -0.19 -0.46 0.54 0.53 0.01 1.93 **** 4.15 5.10 [ -100 to 100 mv ] load reg (mv) 9.30 9.07 9.24 9.52 10.61 10.60 10.25 8.77 9.63 8.18 7.05 3.44 0.34 [ -20 to 20 mv ] (load) (ma) -13.59 -13.84 -4.65 0.00 5.63 -5.75 -6.24 -5.75 -13.47 -14.43 -9.44 -8.09 -7.60 [ -10 to 10 ma ] short ckt (a) 4.27 4.23 4.11 3.34 3.13 3.09 3.25 3.05 3.50 3.19 3.76 4.01 3.84 [ 3 to 9a ] enable (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.48 2.49 2.49 [ 2.4 to 2.6 v ] disable (v) 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 [ -0.1 to 0.1 v ] enable (v) 2.50 2.53 2.55 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.48 2.49 2.49 [ 2.4 to 2.6 v ] sn: 181 date: 5/30/02 6/4/02 6/11/02 6/25/02 7/5/02 7/22/02 8/2/02 8/8/02 8/20/02 11/13/02 12/10/02 1/13/03 1/23/03 tests krads: 1 33 79 169 246 355 443 481 557 1050 1214 1417 1476 limits vout1 (v) 2.51 2.54 2.57 2.59 2.57 2.55 2.54 2.54 2.53 2.52 2.51 2.51 2.51 [ 2.4 to 2.6 v ] vout2 (v) 2.50 2.53 2.55 2.57 2.56 2.54 2.54 2.53 2.52 2.51 2.50 2.50 2.50 [ 2.4 to 2.6 v ] vout3 (v) 2.51 2.54 2.57 2.59 2.57 2.55 2.53 2.54 2.53 2.52 2.51 2.51 2.51 [ 2.4 to 2.6 v ] vout4 (v) 2.49 2.53 2.55 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.50 2.49 2.49 [ 2.4 to 2.6 v ] line reg (mv) -1.27 -0.28 -0.02 -0.48 -0.64 -0.73 0.54 0.32 -0.08 1.59 3.95 3.82 4.83 [ -100 to 100 mv ] load reg (mv) 9.81 9.30 9.41 10.20 10.26 10.14 9.97 9.40 9.57 8.81 6.48 4.13 3.90 [ -20 to 20 mv ] ibias (ma) 2.66 2.73 4.10 0.03 4.60 4.28 4.80 4.53 2.70 1.90 2.48 2.45 2.57 [ -10 to 10 ma ] short ckt (a) 4.27 4.19 4.11 3.29 3.13 3.13 3.29 3.05 3.54 3.19 3.76 4.05 3.84 [ 3 to 9a ] enable (v) 2.51 2.54 2.57 2.58 2.57 2.55 2.53 2.53 2.53 2.52 2.51 2.51 2.51 [ 2.4 to 2.6 v ] disable (v) 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 [ -0.1 to 0.1 v ] enable (v) 2.51 2.54 2.57 2.58 2.57 2.55 2.54 2.53 2.53 2.52 2.51 2.51 2.51 [ 2.4 to 2.6 v ] sn: 186 date: 5/30/02 6/4/02 6/11/02 6/25/02 7/5/02 7/22/02 8/2/02 8/8/02 8/20/02 11/13/02 12/10/02 1/13/03 1/23/03 tests krads: 1 33 79 169 246 355 443 481 557 1050 1214 1417 1476 limits vout1 (v) 2.50 2.54 2.56 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.50 2.50 2.50 [ 2.4 to 2.6 v ] vout2 (v) 2.49 2.53 2.55 2.56 2.54 2.52 2.52 2.51 2.50 2.49 2.49 2.49 2.49 [ 2.4 to 2.6 v ] vout3 (v) 2.50 2.54 2.56 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.50 2.50 2.50 [ 2.4 to 2.6 v ] vout4 (v) 2.48 2.52 2.54 2.55 2.54 2.52 2.51 2.50 2.50 2.49 2.48 2.48 2.48 [ 2.4 to 2.6 v ] line reg (mv) -1.65 -0.23 0.31 -0.36 -0.60 -0.95 -0.03 0.22 -0.14 1.89 4.11 3.45 4.64 [ -100 to 100 mv ] load reg (mv) 7.92 8.21 7.69 7.97 8.60 7.62 5.10 8.42 7.10 7.43 4.47 1.72 1.89 [ -20 to 20 mv ] ibias (ma) 2.62 2.73 2.70 0.03 2.65 2.50 2.65 2.58 2.67 2.24 2.44 2.46 2.53 [ -10 to 10 ma ] short ckt (a) 4.27 4.11 4.03 3.29 3.13 3.05 3.29 3.05 3.54 3.19 3.76 4.01 3.84 [ 3 to 9a ] enable (v) 2.50 2.54 2.56 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.50 2.50 2.50 [ 2.4 to 2.6 v ] disable (v) 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 [ -0.1 to 0.1 v ] enable (v) 2.50 2.54 2.56 2.57 2.55 2.53 2.52 2.52 2.51 2.50 2.50 2.50 2.50 [ 2.4 to 2.6 v ]
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